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Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, Chip capability Terminal current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
IXFN 340N06
VDSS = 60 V ID25 = 340 A 3 mW RDS(on) = trr 250 ns
D
G S
S
Maximum Ratings 60 60 20 30 340 100 1360 200 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A mJ J V/ns W C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features
International standard packages miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Low package inductance Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 2.0 4.0 200 TJ = 25C TJ = 125C 100 2 3 V V nA mA mA mW
DC-DC converters Battery chargers Switched-mode and resonant-mode
power supplies
VDSS VGH(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 3 mA V DS = VGS, ID = 8 mA V GS = 20 VDC, VDS = 0 V DS = VDSS V GS = 0 V V GS = 10 V, ID = 100A Pulse test, t 300 ms, duty cycle d 2 %
DC choppers Temperature and lighting controls
Advantages
Easy to mount Space savings High power density
98751 (10/00)
(c) 2000 IXYS All rights reserved
IXFN 340N06
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 105 16800 VGS = 0 V, VDS = 25 V, f = 1 MHz 8200 5000 140 VGS = 10 V, VDS = 0.5 VDSS, ID = 100A RG = 2 W (External), 95 200 33 600 VGS = 10 V, VDS = 50V, ID = 100A 110 300 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 60A, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 340 1360 1.2 250 A A V ns mC A
I F = 100A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % I F = 50A, -di/dt = 100 A/ms, VR = 40V; TJ =25C 1.4 8
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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